Vishay CDR31BP470BFWSMT

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

400 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

40 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

FQP2N40_F080

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

5.5 nC

Rds On - Drain-Source Resistance

5.8 Ohms

RoHS

Details

Id - Continuous Drain Current

1.8 A

系列

FQP2N40

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET

宽度

4.7 mm

高度

16.3 mm

长度

10.67 mm