Vishay CDR35BX154BKWSAB

包装/外壳

TO-3PN-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

185 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

417 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.162260 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

FCA47N60_F109

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

270 nC

Tradename

SuperFET

Rds On - Drain-Source Resistance

70 mOhms

RoHS

Details

Typical Turn-Off Delay Time

520 ns

Id - Continuous Drain Current

47 A

系列

FCA47N60_F109

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

210 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

5 mm

高度

20.1 mm

长度

16.2 mm