Vishay CRA12E1032K70JTR

包装/外壳

Power-56-8

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

17 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003739 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

98 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

55 nC

Rds On - Drain-Source Resistance

3.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

25 ns

Id - Continuous Drain Current

126 A

包装

Reel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

6 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET