J309-TR1-E3详情
Vishay J309-TR1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Channel Mode
Depletion
Number of Elements per Chip
1
Maximum Gate Source Voltage (V)
-25
Maximum Gate Source Leakage Current (nA)
1
Maximum IDSS (uA)
30000
Maximum Drain Source Resistance (mOhm)
35000(Typ)
Typical Input Capacitance @ Vds (pF)
4@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
1.9@10V
Typical Forward Transconductance (S)
0.014
Maximum Power Dissipation (mW)
350
Typical Power Gain (dB)
16
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Standard Package Name
TO-92
Supplier Package
TO-92
Military
无
Mounting
通孔
Package Height
4.7(Max)
Package Length
4.7
Package Width
3.68
PCB changed
3
Lead Shape
Formed
包装
卷带
零件状态
Obsolete
类型
JFET
引脚数量
3
配置
Single
信道型
N
RoHS状态
符合RoHS标准
J309-TR1-E3拓展信息









哦! 它是空的。