M55342H12B13E0PT0详情
Vishay M55342H12B13E0PT0重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SC-70-3
Vds - Drain-Source Breakdown Voltage
40 V
Typical Turn-On Delay Time
11 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Qualification
AEC-Q101
Pd - Power Dissipation
94 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.139332 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
800
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Part # Aliases
FDB9409L_F085
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
52 nC
Rds On - Drain-Source Resistance
2.3 mOhms
RoHS
Details
Typical Turn-Off Delay Time
38 ns
Id - Continuous Drain Current
90 A
包装
切割胶带
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
25 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
M55342H12B13E0PT0拓展信息








哦! 它是空的。