Vishay P0603E3002BN

包装/外壳

TO-247-3

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

25 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Qualification

AEC-Q101

Pd - Power Dissipation

208 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

450

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

FCH190N65F_F085

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

63 nC

Tradename

SuperFET II

Rds On - Drain-Source Resistance

401 mOhms

RoHS

Details

Typical Turn-Off Delay Time

64 ns

Id - Continuous Drain Current

20.6 A

系列

FCH190N65F_F085

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

14.5 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.82 mm

高度

20.82 mm

长度

15.87 mm