Vishay P0603H4992FB

包装/外壳

TO-92-3

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

830 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.010088 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Forward Transconductance - Min

0.32 S

Channel Mode

Enhancement

Part # Aliases

BS170_D26Z

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

-

Rds On - Drain-Source Resistance

1.2 Ohms

RoHS

Details

Id - Continuous Drain Current

500 mA

系列

BS170

包装

切割胶带

类型

FET

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

晶体管类型

1 N-Channel

产品

MOSFET小信号

产品类别

MOSFET

宽度

4.19 mm

高度

5.33 mm

长度

5.2 mm