Vishay PLT0603Z5050BSTS

包装/外壳

TO-220AB-3

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

104 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SIHP5N50D-GE3

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

10 nC

Rds On - Drain-Source Resistance

1.5 Ohms

RoHS

Details

Typical Turn-Off Delay Time

14 ns

Id - Continuous Drain Current

5.3 A

系列

D

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

11 ns

产品类别

MOSFET

产品类别

MOSFET

宽度

4.7 mm

高度

15.49 mm

长度

10.41 mm