Vishay PLT0805Z1102BSWS

包装/外壳

211-07

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

31 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

5

Minimum Operating Temperature

- 65 C

Mounting Styles

螺钉安装

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Collector- Emitter Voltage VCEO Max

18 V

包装

Tray

类型

射频双极功率

子类别

Transistors

技术

Si

工作频率

175 MHz

配置

Single

产品类别

射频双极晶体管

晶体管类型

双极电源

连续集电极电流

2.5 A

产品类别

射频双极晶体管