PTN0805E9531BST0详情
Vishay PTN0805E9531BST0重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
Vds - Drain-Source Breakdown Voltage
150 V
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
429 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.211644 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
30
Mounting Styles
通孔
Forward Transconductance - Min
219 S
Channel Mode
Enhancement
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
92 nC
Tradename
PowerTrench
Rds On - Drain-Source Resistance
4.8 mOhms
RoHS
Details
Id - Continuous Drain Current
167 A
系列
FDH055N15A
包装
Tube
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
67 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
宽度
4.82 mm
高度
20.82 mm
长度
15.87 mm
PTN0805E9531BST0拓展信息








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