PTN1005H2943BST1详情
Vishay PTN1005H2943BST1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-7
Vds - Drain-Source Breakdown Voltage
40 V
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
214 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.056438 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
800
Mounting Styles
SMD/SMT
Forward Transconductance - Min
368 S
Channel Mode
Enhancement
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
84 nC
Tradename
PowerTrench
Rds On - Drain-Source Resistance
2 mOhms
RoHS
Details
Id - Continuous Drain Current
219 A
系列
FDB024N04AL7
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
宽度
9.4 mm
高度
4.7 mm
长度
10.2 mm
PTN1005H2943BST1拓展信息








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