PTN1005H7961BBT1详情
Vishay PTN1005H7961BBT1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
MAGN-A-PAK
On-State Voltage
1.59 V
Rated Repetitive Off-State Voltage VDRM
1.4 kV
Gate Trigger Voltage - Vgt
3 V
Gate Trigger Current - Igt
200 mA
Maximum Operating Temperature
+ 130 C
Unit Weight
1.102 lbs
Minimum Operating Temperature
- 40 C
Holding Current Ih Max
500 mA
Factory Pack QuantityFactory Pack Quantity
2
Mounting Styles
SMD/SMT
Manufacturer
Vishay
Brand
Vishay Semiconductors
Off-State Leakage Current @ VDRM IDRM
50 mA
Non Repetitive On-State Current
7500 A
RoHS
Details
On-State RMS Current - It RMS
510 A
Breakover Current IBO Max
7850 A
包装
Bulk
子类别
Thyristors
技术
Si
额定电流
230 A
电路型态
SCR / Diodes
产品类别
可控硅模块
产品类别
可控硅模块
PTN1005H7961BBT1拓展信息








哦! 它是空的。