Vishay PTN1010H2462BBT1

包装/外壳

TDSON-8

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

5.2 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

50 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003683 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

38 S

Channel Mode

Enhancement

Part # Aliases

SP000269785 BSC5N3LSGXT BSC050N03LSGATMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

26 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

21 ns

Id - Continuous Drain Current

80 A

系列

OptiMOS 3

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

4 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

5.15 mm

高度

1.27 mm

长度

5.9 mm