Vishay PTN2512E1212BBT5

包装/外壳

Power-56-8

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

27 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.002402 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

15 nC

Tradename

PowerTrench

Rds On - Drain-Source Resistance

6.8 mOhms

RoHS

Details

Typical Turn-Off Delay Time

17 ns

Id - Continuous Drain Current

13.5 A

系列

FDMS7692A

包装

切割胶带

类型

Power Trench MOSFET

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

2.7 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

5 mm

高度

1.1 mm

长度

6 mm