Vishay RCWP20103K74FKS2

包装/外壳

TO-252-3

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

25 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

1.4 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

12 nC

Rds On - Drain-Source Resistance

500 mOhms

RoHS

Details

Typical Turn-Off Delay Time

9.6 ns

Id - Continuous Drain Current

5.1 A

包装

Bulk

子类别

MOSFETs

技术

Si

通道数量

1 Channel

上升时间

63 ns

产品类别

MOSFET

晶体管类型

1 P-Channel

产品类别

MOSFET