Vishay RCWP2010470RJKTP

包装/外壳

TSSOP-8

Vds - Drain-Source Breakdown Voltage

12 V

Typical Turn-On Delay Time

50 ns

Vgs th - Gate-Source Threshold Voltage

400 mV

Pd - Power Dissipation

1.5 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

45 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

110 nC

Rds On - Drain-Source Resistance

3.6 Ohms

RoHS

Details

Typical Turn-Off Delay Time

270 ns

Id - Continuous Drain Current

9.5 A

包装

Bulk

子类别

MOSFETs

技术

Si

通道数量

1 Channel

上升时间

75 ns

产品类别

MOSFET

晶体管类型

1 P-Channel

产品类别

MOSFET