Vishay RCWP251256R0FKS2

包装/外壳

TO-252-3

Vds - Drain-Source Breakdown Voltage

200 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

25 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

0.98 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

8.9 nC

Id - Continuous Drain Current

1.9 A

Typical Turn-Off Delay Time

11 ns

RoHS

Details

Rds On - Drain-Source Resistance

3 Ohms

包装

Bulk

子类别

MOSFETs

技术

Si

通道数量

1 Channel

上升时间

12 ns

产品类别

MOSFET

晶体管类型

1 P-Channel

产品类别

MOSFET