RCWP72252K21FKET详情
Vishay RCWP72252K21FKET重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
221-11-3
Vds - Drain-Source Breakdown Voltage
65 V
Vgs th - Gate-Source Threshold Voltage
5 V
Pd - Power Dissipation
300 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 200 C
Vgs - Gate-Source Voltage
40 V
Minimum Operating Temperature
- 65 C
Mounting Styles
SMD/SMT
Manufacturer
Advanced Semiconductor, Inc.
Brand
Advanced Semiconductor, Inc.
RoHS
Details
Id - Continuous Drain Current
16 A
包装
Tray
子类别
MOSFETs
技术
Si
工作频率
175 MHz
配置
Single
产品类别
射频MOSFET晶体管
产品类别
射频MOSFET晶体管
RCWP72252K21FKET拓展信息








哦! 它是空的。