Vishay RNC55J32R0BS

包装/外壳

SOT-23-3

Vds - Drain-Source Breakdown Voltage

20 V

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

1.6 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

10 nC

Rds On - Drain-Source Resistance

108 mOhms

RoHS

Details

Id - Continuous Drain Current

1.15 A

系列

FDV045P20L

包装

切割胶带

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET

宽度

1.3 mm

高度

1.2 mm

长度

2.9 mm