RS007R2200HR55详情
Vishay RS007R2200HR55重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-3PN-3
Maximum Gate Emitter Voltage
- 20 V, + 20 V
Pd - Power Dissipation
176 W
Maximum Operating Temperature
+ 175 C
Collector-Emitter Saturation Voltage
1.8 V
Unit Weight
0.225789 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
450
Continuous Collector Current at 25 C
60 A
Mounting Styles
通孔
Manufacturer
onsemi
Brand
onsemi / Fairchild
Continuous Collector Current Ic Max
60 A
RoHS
Details
Collector- Emitter Voltage VCEO Max
650 V
系列
FGA6530WDF
包装
Tube
子类别
IGBTs
技术
Si
配置
Single
产品类别
IGBT晶体管
产品类别
IGBT晶体管
RS007R2200HR55拓展信息








哦! 它是空的。