RS01020R00JS73H55详情
Vishay RS01020R00JS73H55重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
Vds - Drain-Source Breakdown Voltage
600 V
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
417 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.211644 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
30
Mounting Styles
通孔
Channel Mode
Enhancement
Part # Aliases
FCH47N60_F133
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
270 nC
Rds On - Drain-Source Resistance
70 mOhms
RoHS
Details
Id - Continuous Drain Current
47 A
系列
FCH47N60
包装
Tube
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
宽度
4.82 mm
高度
20.82 mm
长度
15.87 mm
RS01020R00JS73H55拓展信息








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