Vishay RS02B6R200JR50

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

27 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

278 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

78 nC

Tradename

SuperFET II

Rds On - Drain-Source Resistance

220 mOhms

RoHS

Details

Typical Turn-Off Delay Time

75 ns

Id - Continuous Drain Current

23 A

系列

FCP220N80

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

19 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.7 mm

高度

16.3 mm

长度

10.67 mm