SI1032R-T1-GE3详情
VISHAY SI1032R-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
20V
Drain current
0.14A
Pulsed drain current
-0.5A
Case
SC75A
Gate-source voltage
±6V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Version
ESD
Gross weight
0.02g
Certificates
RoHS compliant
Power dissipation
0.13W
Gate charge
0.75nC
On-state resistance
5Ω
SI1032R-T1-GE3拓展信息
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哦! 它是空的。