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¥4.922186
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¥4.643575
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¥4.380728
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¥4.132764
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SI1401EDH-T1-GE3详情
VISHAY SI1401EDH-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-12V
Drain current
-4A
Pulsed drain current
-25A
Case
SC70
Gate-source voltage
±10V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Version
ESD
Gross weight
0.1g
Certificates
RoHS compliant
Power dissipation
1.8W
Gate charge
36nC
On-state resistance
34mΩ
SI1401EDH-T1-GE3拓展信息
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哦! 它是空的。