SI1424EDH-T1-GE3详情
VISHAY SI1424EDH-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
20V
Drain current
4A
Case
SC70
Certificates
RoHS compliant
Gross weight
0.1g
Version
ESD
Kind of channel
enhanced
Kind of package
reel
Kind of package1
tape
Mounting
SMD
Gate-source voltage
±8V
Power dissipation
1.8W
Gate charge
11.5nC
On-state resistance
33mΩ
SI1424EDH-T1-GE3拓展信息
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哦! 它是空的。