SI2369BDS-T1-GE3详情
VISHAY SI2369BDS-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-30V
Drain current
-7.5A
Pulsed drain current
-50A
Case
SOT23
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.1g
Certificates
RoHS compliant
Power dissipation
2.5W
Gate charge
19.5nC
On-state resistance
39mΩ
SI2369BDS-T1-GE3拓展信息
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哦! 它是空的。