VISHAY SI3129DV-T1-GE3

Type of transistor

P-MOSFET

Polarisation

unipolar

Drain-source voltage

-80V

Drain current

-5.4A

Pulsed drain current

-20A

Case

TSOP6

Gate-source voltage

±20V

Mounting

SMD

Kind of package

reel,

Kind of channel

enhanced

Gross weight

0.1 g

Power dissipation

4.2W

Gate charge

18nC

On-state resistance

124.2mΩ