VISHAY SI3493BDV-T1-E3

Type of transistor

P-MOSFET

Polarisation

unipolar

Drain-source voltage

-20V

Gross weight

0.1 g

Kind of channel

enhanced

Kind of package

reel,

Mounting

SMD

Gate-source voltage

±8V

Case

TSOP6

Pulsed drain current

-25A

Drain current

-8A

Power dissipation

2.97W

Gate charge

43.5nC

On-state resistance

45mΩ