SI3499DV-T1-BE3详情
VISHAY SI3499DV-T1-BE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-8V
Drain current
-7A
Pulsed drain current
-20A
Case
TSOP6
Gate-source voltage
±5V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.01g
Certificates
RoHS compliant
Power dissipation
2W
Gate charge
42nC
On-state resistance
48mΩ
SI3499DV-T1-BE3拓展信息
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哦! 它是空的。