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价格梯度
内地含税价
1
¥15.631476
10
¥14.746674
100
¥13.911957
500
¥13.124493
1000
¥12.381593
SI4100DY-T1-E3详情
VISHAY SI4100DY-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
100V
Drain current
6.8A
Pulsed drain current
20A
Case
SO8
Gate-source voltage
±20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.1g
Certificates
RoHS compliant
Power dissipation
6W
Gate charge
20nC
On-state resistance
84mΩ
SI4100DY-T1-E3拓展信息
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