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价格梯度
内地含税价
1
¥12.626306
10
¥11.911607
100
¥11.237368
500
¥10.601293
1000
¥10.001218
SI4100DY-T1-GE3详情
VISHAY SI4100DY-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
100V
Certificates
RoHS compliant
Gross weight
0.1g
Kind of channel
enhanced
Kind of package
reel
Kind of package1
tape
Mounting
SMD
Gate-source voltage
±20V
Case
SO8
Pulsed drain current
20A
Drain current
6.8A
Power dissipation
6W
Gate charge
20nC
On-state resistance
84mΩ
SI4100DY-T1-GE3拓展信息
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