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价格梯度
内地含税价
1
¥2.947926
10
¥2.781061
100
¥2.623646
500
¥2.475138
1000
¥2.335033
SI4101DY-T1-GE3详情
VISHAY SI4101DY-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-30V
Drain current
-25.7A
Pulsed drain current
-70A
Case
SO8
Gate-source voltage
±20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.1g
Certificates
RoHS compliant
Power dissipation
6W
Gate charge
203nC
On-state resistance
8mΩ
SI4101DY-T1-GE3拓展信息
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哦! 它是空的。