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价格梯度
内地含税价
1
¥12.446474
10
¥11.741957
100
¥11.077315
500
¥10.450301
1000
¥9.858769
SI4126DY-T1-GE3详情
VISHAY SI4126DY-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
30V
Drain current
39A
Pulsed drain current
70A
Case
SO8
Gate-source voltage
±20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.1g
Certificates
RoHS compliant
Power dissipation
7.8W
Gate charge
105nC
On-state resistance
3.4mΩ
SI4126DY-T1-GE3拓展信息
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哦! 它是空的。