SI4401FDY-T1-GE3详情
VISHAY SI4401FDY-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-40V
Drain current
-11A
Pulsed drain current
-80A
Case
SO8
Gate-source voltage
±20V
Mounting
SMD
Kind of package
reel,
Kind of channel
enhanced
Gross weight
0.154 g
Power dissipation
3.2W
Gate charge
31nC
On-state resistance
18.3mΩ
SI4401FDY-T1-GE3拓展信息
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哦! 它是空的。