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内地含税价
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¥13.034885
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¥12.29706
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¥11.601003
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¥10.94434
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¥10.324851
SI4459BDY-T1-GE3详情
VISHAY SI4459BDY-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-30V
Drain current
-27.8A
Pulsed drain current
-150A
Case
SO8
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.1g
Certificates
RoHS compliant
Power dissipation
5.6W
Gate charge
84nC
On-state resistance
8.2mΩ
SI4459BDY-T1-GE3拓展信息
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哦! 它是空的。