VISHAY SI4491EDY-T1-GE3

Gross weight

0.1 g

Kind of channel

enhanced

Kind of package

reel,

Mounting

SMD

Gate-source voltage

±25V

Case

SO8

Pulsed drain current

-60A

Drain current

-25.8A

Drain-source voltage

-30V

Polarisation

unipolar

Type of transistor

P-MOSFET

Power dissipation

6.9W

Gate charge

153nC

On-state resistance

11.2mΩ