Vishay SI4848BDY-T1-GE3

安装类型

表面贴装

包装/外壳

8-SOIC (0.154, 3.90mm Width)

供应商器件包装

8-SOIC

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SI4848

Current - Continuous Drain (Id) @ 25℃

3.7A (Ta), 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

Vishay Siliconix

Power Dissipation (Max)

2.5W (Ta), 4.5W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

4.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

6 nC

Rds On - Drain-Source Resistance

89 mOhms

Id - Continuous Drain Current

3.8 A

操作温度

-55°C ~ 150°C (TJ)

系列

TrenchFET®

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

157mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

400 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

9 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±30V

场效应管特性

-