SI4890DY-T1-E3详情
VISHAY SI4890DY-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
30V
Drain current
11A
Pulsed drain current
50A
Case
SO8
Gate-source voltage
±25V
Mounting
SMD
Kind of package
reel,
Kind of channel
enhanced
Gross weight
0.1 g
Power dissipation
2.5W
Gate charge
20nC
On-state resistance
20mΩ
SI4890DY-T1-E3拓展信息
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哦! 它是空的。