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价格梯度
内地含税价
1
¥12.734693
10
¥12.01386
100
¥11.333835
500
¥10.692291
1000
¥10.087069
SI4900DY-T1-E3详情
VISHAY SI4900DY-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET x2
Polarisation
unipolar
Drain-source voltage
60V
Drain current
5.3A
Pulsed drain current
20A
Case
SO8
Gate-source voltage
±20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.1g
Certificates
RoHS compliant
Power dissipation
3.1W
Gate charge
20nC
On-state resistance
72mΩ
SI4900DY-T1-E3拓展信息
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哦! 它是空的。