VISHAY SI4900DY-T1-GE3

Type of transistor

N-MOSFET x2

Polarisation

unipolar

Drain-source voltage

60V

Drain current

5.3A

Pulsed drain current

20A

Case

SO8

Gate-source voltage

±20V

Mounting

SMD

Kind of package1

tape

Kind of package

reel

Kind of channel

enhanced

Gross weight

0.1g

Certificates

RoHS compliant

Power dissipation

3.1W

Gate charge

20nC

On-state resistance

72mΩ