SI7615BDN-T1-GE3详情
Vishay SI7615BDN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
PowerPAK® 1212-8
供应商器件包装
PowerPAK® 1212-8
Package
零售包装
厂商
Glenair
Product Status
活跃
Continuous Drain Current Id
104
Base Product Number
SI7615
Current - Continuous Drain (Id) @ 25℃
29A (Ta), 104A (Tc)
Power Dissipation (Max)
5.2W (Ta), 66W (Tc)
Vds - Drain-Source Breakdown Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Pd - Power Dissipation
66 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
103 nC
Rds On - Drain-Source Resistance
3.8 mOhms
Id - Continuous Drain Current
104 A
系列
*
操作温度
-55°C ~ 150°C (TJ)
技术
MOSFET (Metal Oxide)
通道数量
1 Channel
功率耗散
66
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
3.8mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
1.5V @ 250µA
输入电容(Ciss)(Max)@Vds
4890 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
155 nC @ 10 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±12V
场效应管特性
-
SI7615BDN-T1-GE3拓展信息
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