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价格梯度
内地含税价
1
¥19.495212
10
¥18.391711
100
¥17.350667
500
¥16.368555
1000
¥15.442032
SI7898DP-T1-E3详情
VISHAY SI7898DP-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
150V
Drain current
4.8A
Pulsed drain current
25A
Case
PowerPAK® SO8
Gate-source voltage
±20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.1g
Certificates
RoHS compliant
Power dissipation
5W
Gate charge
21nC
On-state resistance
95mΩ
SI7898DP-T1-E3拓展信息
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哦! 它是空的。