VISHAY SI8457DB-T1-E1

Type of transistor

P-MOSFET

Polarisation

unipolar

Drain-source voltage

-12V

Drain current

-10.2A

Pulsed drain current

-25A

Case

MICROFOOT® 1.6x1.6

Gate-source voltage

±8V

Mounting

SMD

Kind of package

reel,

Kind of channel

enhanced

Gross weight

0.001 g

Power dissipation

2.7W

Gate charge

93nC

On-state resistance

35mΩ