SI8489EDB-T2-E1详情
VISHAY SI8489EDB-T2-E1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Drain current
-5.4A
Pulsed drain current
-20A
Gate-source voltage
±12V
Mounting
SMD
Kind of package
reel,
Kind of channel
enhanced
Gross weight
0.001 g
Drain-source voltage
-20V
Polarisation
unipolar
Type of transistor
P-MOSFET
Power dissipation
1.8W
Gate charge
27nC
On-state resistance
82mΩ
SI8489EDB-T2-E1拓展信息
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哦! 它是空的。