VISHAY SI8806DB-T2-E1

Type of transistor

N-MOSFET

Polarisation

unipolar

Drain-source voltage

12V

Drain current

3.9A

Pulsed drain current

20A

Gate-source voltage

±8V

Mounting

SMD

Kind of package

reel,

Kind of channel

enhanced

Gross weight

0.001 g

Power dissipation

0.9W

Gate charge

17nC

On-state resistance

75mΩ