SIA430DJT-T1-GE3详情
VISHAY SIA430DJT-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
20V
Drain current
12A
Pulsed drain current
40A
Gate-source voltage
±20V
Mounting
SMD
Kind of package
reel,
Kind of channel
enhanced
Gross weight
0.1 g
Power dissipation
19.2W
Gate charge
18nC
On-state resistance
18.5mΩ
SIA430DJT-T1-GE3拓展信息
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哦! 它是空的。