SIA477EDJ-T1-GE3详情
VISHAY SIA477EDJ-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-12V
Drain current
-12A
Pulsed drain current
-50A
Gate-source voltage
±8V
Mounting
SMD
Kind of package
reel,
Kind of channel
enhanced
Gross weight
0.1 g
Power dissipation
19W
Gate charge
83nC
On-state resistance
32mΩ
SIA477EDJ-T1-GE3拓展信息
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哦! 它是空的。