VISHAY SIB433EDK-T1-GE3

Type of transistor

P-MOSFET

Polarisation

unipolar

Drain-source voltage

-20V

Drain current

-9A

Pulsed drain current

-20A

Gate-source voltage

±8V

Mounting

SMD

Kind of package

reel,

Kind of channel

enhanced

Gross weight

0.1 g

Power dissipation

13W

Gate charge

21nC

On-state resistance

0.105Ω