VISHAY SIDR170DP-T1-RE3

Type of transistor

N-MOSFET

Polarisation

unipolar

Drain-source voltage

100V

Drain current

95A

Pulsed drain current

200A

Gate-source voltage

±20V

Mounting

SMD

Kind of package

reel,

Kind of channel

enhanced

Gross weight

0.1 g

Power dissipation

125W

Gate charge

0.14µC

On-state resistance

5.85mΩ