SIDR392DP-T1-GE3详情
VISHAY SIDR392DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Certificates
RoHS compliant
Gross weight
0.1g
Kind of channel
enhanced
Kind of package
reel
Kind of package1
tape
Mounting
SMD
Pulsed drain current
200A
Drain current
100A
Drain-source voltage
30V
Polarisation
unipolar
Type of transistor
N-MOSFET
Power dissipation
125W
Gate charge
188nC
On-state resistance
930µΩ
SIDR392DP-T1-GE3拓展信息
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哦! 它是空的。